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IXBT12N300HV

IGBTs TO268 3KV 12A BIMOSFET

Manufacturer:

Mfr Part:
IXBT12N300HV

TTI Part:
IXBT12N300HV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max3 kV
Collector-Emitter Saturation Voltage3.2 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C30 A
Pd - Power Dissipation160 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesVery High Voltage
PackagingTube
Continuous Collector Current Ic Max30 A
Gate-Emitter Leakage Current100 nA
Moisture SensitiveYes
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameBIMOSFET

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameDechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo[12.2.1.16,9.02,1
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 28 Weeks
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(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$37.36$11,208.00
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NCNR - Cannot be cancelled or returned.

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