Reference Only

IXBT10N170

IGBTs 10 Amps 1700V 2.3 Rds

Manufacturer:

Mfr Part:
IXBT10N170

TTI Part:
IXBT10N170

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage3.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C20 A
Pd - Power Dissipation140 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXBT10N170
PackagingTube
Continuous Collector Current Ic Max40 A
Gate-Emitter Leakage Current100 nA
Height5.1 mm
Length16.05 mm
Product TypeIGBTs
SubcategoryTransistors
TradenameBIMOSFET
Width14 mm

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 40 Weeks
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Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$14.20$4,260.00
Need more?
NCNR - Cannot be cancelled or returned.
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