Reference Only

IXBT10N170

IGBTs 10 Amps 1700V 2.3 Rds

Manufacturer:

Mfr Part:
IXBT10N170

TTI Part:
IXBT10N170

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage3.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C20 A
Pd - Power Dissipation140 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXBT10N170
PackagingTube
Continuous Collector Current Ic Max40 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameBIMOSFET

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 70 Weeks
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Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$12.91$3,873.00
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NCNR - Cannot be cancelled or returned.

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