Reference Only

MMIX1X200N60B3H1

IGBTs SMPD IGBTs Power Device.

Manufacturer:

Mfr Part:
MMIX1X200N60B3H1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseSMDP-21
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max600 V
Collector-Emitter Saturation Voltage1.7 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C175 A
Pd - Power Dissipation520 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesMMIX1X200N60
PackagingTube
Gate-Emitter Leakage Current200 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 28 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 20)
Quantity Unit PriceExt. Price
$42.42$12,726.00
Need more?