Reference Only

IXTY08N100P

MOSFETs 0.8 Amps 1000V 20 Rds.

Manufacturer:

Mfr Part:
IXTY08N100P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current800 mA
Rds On - Drain-Source Resistance20 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge11.3 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation42 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time34 ns
Product TypeMOSFETs
Rise Time37 ns
SeriesIXTY08N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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Lead Time: 32 Weeks
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(Minimum: 350 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.86$1,001.00
$2.40$1,344.00
$2.22$2,331.00
$2.08$5,241.60
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