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IXSH80N120L2KHV
New Product
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L.
Datasheet
IXSH80N120L2KHV DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | SiC MOSFETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-4L | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Id - Continuous Drain Current | 79 A | |
| Rds On - Drain-Source Resistance | 39 mOhms | |
| Vgs - Gate-Source Voltage | - 5 V, + 20 V | |
| Qg - Gate Charge | 135 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 395 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 14 ns | |
| Packaging | Tube | |
| Product Type | SiC MOSFETS | |
| Product | MOSFETs | |
| Rise Time | 24.4 ns | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Transistor Type | 1 N-Channel | |
| Type | SiC MOSFET | |
| Typical Turn-Off Delay Time | 28.8 ns | |
| Typical Turn-On Delay Time | 12.8 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 27 Weeks
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 450 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $9.71 | $4,369.50 | |
| $8.65 | $4,411.50 | |
| $8.09 | $8,251.80 |
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