Reference Only

IXFT94N30P3

MOSFETs N-Channel: Power MOSFET w/Fast Diode.

Manufacturer:

Mfr Part:
IXFT94N30P3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current94 A
Rds On - Drain-Source Resistance36 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge102 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.04 kW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time11 ns
Forward Transconductance - Min40 S
Product TypeMOSFETs
Rise Time19 ns
SeriesIXFT94N30
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time49 ns
Typical Turn-On Delay Time23 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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Lead Time: 22 Weeks
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