Reference Only

IXFN32N100P

MOSFET Modules 32 Amps 1000V 0.32 Rds.

Manufacturer:

Mfr Part:
IXFN32N100P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current27 A
Rds On - Drain-Source Resistance320 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage6.5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation690 W
SeriesIXFN32N100
PackagingTube
ConfigurationSingle
Fall Time43 ns
Height12.22 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time55 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypePolar Power MOSFET HiPerFET
Typical Turn-Off Delay Time76 ns
Typical Turn-On Delay Time50 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 27 Weeks
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(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
$29.20$8,760.00
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