Reference Only

IXFH69N30P

MOSFETs 69 Amps 300V 0.049 Rds.

Manufacturer:

Mfr Part:
IXFH69N30P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current69 A
Rds On - Drain-Source Resistance49 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge156 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation500 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time27 ns
Forward Transconductance - Min30 S
Product TypeMOSFETs
Rise Time25 ns
SeriesIXFH69N30
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 24 Weeks
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(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
$10.22$3,066.00
$9.11$4,646.10
$8.51$8,680.20
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