Reference Only

IXFH10N100P

MOSFETs 10 Amps 1000V.

Manufacturer:

Mfr Part:
IXFH10N100P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance1.4 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage6.5 V
Qg - Gate Charge56 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation380 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time75 ns
Forward Transconductance - Min4.2 S
Product TypeMOSFETs
Rise Time45 ns
SeriesHiPerFET
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time47 ns
Typical Turn-On Delay Time38 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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Lead Time: 27 Weeks
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(Minimum: 300 / Multiples: 1)
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$6.39$1,917.00
$5.69$2,901.90
$5.32$5,426.40
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