Reference Only

US6X7TR

Bipolar Transistors - BJT NPN+NPN 12VCEO 1.5A SOT-363T.

Manufacturer:

Mfr Part:
US6X7TR

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363T-6
Transistor PolarityNPN
ConfigurationDual
Collector- Emitter Voltage VCEO Max12 V
Collector- Base Voltage VCBO15 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
Pd - Power Dissipation400 mW
Gain Bandwidth Product fT400 MHz
Maximum Operating Temperature+ 150 C
PackagingReel
Continuous Collector Current1.5 A
DC Collector/Base Gain hfe Min270 at 200 mA, 2 V
DC Current Gain hFE Max680 at 200 mA, 2 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesUS6X7

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290055
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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