US6M2GTR ROHM Semiconductor

US6M2GTR

MOSFETs 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode.

Manufacturer:

Mfr Part:
US6M2GTR

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTUMT-6
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V, 20 V
Id - Continuous Drain Current1 A, 1.5 A
Rds On - Drain-Source Resistance170 mOhms, 280 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage1.5 V, 2 V
Qg - Gate Charge1.6 nC, 2.1 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time6 ns, 10 ns
Product TypeMOSFETs
Rise Time9 ns, 8 ns
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time15 ns, 25 ns
Typical Turn-On Delay Time7 ns, 9 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 16 Weeks
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(Minimum: 3,000 / Multiples: 1)
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$0.222$666.00
$0.213$1,917.00
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