Reference Only

SH8M13GZETB

Not Recommended for New Designs
MOSFETs 4V Drive Nch+Pch Si MOSFET

Manufacturer:

Mfr Part:
SH8M13GZETB

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOP-8
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current6 A, 7 A
Rds On - Drain-Source Resistance22 mOhms, 21.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge5 nC, 18 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time7 ns, 65 ns
Forward Transconductance - Min2.5 S, 6 S
Product TypeMOSFETs
Rise Time16 ns, 40 ns
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time30 ns, 80 ns
Typical Turn-On Delay Time8 ns, 12 ns
Part # AliasesSH8M13

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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