Reference Only

SCT3160KWAHRTL

SiC MOSFETs .

Manufacturer:

Mfr Part:
SCT3160KWAHRTL

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7LA
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current17 A
Rds On - Drain-Source Resistance208 mOhms
Vgs - Gate-Source Voltage- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage5.6 V
Qg - Gate Charge42 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation100 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time9 ns
Forward Transconductance - Min2.5 S
PackagingReel
Product TypeSiC MOSFETS
ProductMOSFET's
Rise Time9 ns
SeriesSCT3
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Typical Turn-On Delay Time3 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541100080
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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