Reference Only
SCT3022ALC11
SiC MOSFETs
Datasheet
SCT3022ALC11 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | SiC MOSFETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 93 A | |
| Rds On - Drain-Source Resistance | 22 mOhms | |
| Vgs - Gate-Source Voltage | - 4 V, + 22 V | |
| Vgs th - Gate-Source Threshold Voltage | 5.6 V | |
| Qg - Gate Charge | 133 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 339 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 35 ns | |
| Product Type | SiC MOSFETS | |
| Rise Time | 53 ns | |
| Series | SCT3x | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Typical Turn-Off Delay Time | 61 ns | |
| Typical Turn-On Delay Time | 25 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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