S4001 ROHM Semiconductor

S4001

SiC MOSFETs

Manufacturer:

Mfr Part:
S4001

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseDIE
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current70 A
Rds On - Drain-Source Resistance30 mOhms
Vgs - Gate-Source Voltage- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage5.6 V
Qg - Gate Charge104 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
ConfigurationSingle
Fall Time27 ns
Forward Transconductance - Min9.4 S
Product TypeSiC MOSFETS
ProductSiC MOSFETS
Rise Time41 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypePower MOSFET
Typical Turn-Off Delay Time48 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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