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RSD100N10TL

End of Life
MOSFETs PWR MOSFET 4V

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Mfr Part:
RSD100N10TL

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance133 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge18 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation20 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min4.5 S
Product TypeMOSFETs
Rise Time17 ns
SeriesRSD100N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time10 ns
Part # AliasesRSD100N10

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

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