Reference Only

RQ3G100GNTB

Not Recommended for New Designs
MOSFETs

Manufacturer:

Mfr Part:
RQ3G100GNTB

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSMT-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current27 A
Rds On - Drain-Source Resistance14.3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.2 V
Qg - Gate Charge8.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time3.2 ns
Forward Transconductance - Min7.5 S
Product TypeMOSFETs
Rise Time4.2 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23.1 ns
Typical Turn-On Delay Time8 ns
Part # AliasesRQ3G100GN

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Reel

Pricing not available for this package type
Need pricing?