Reference Only

RGT8NS65DGTL

Not Recommended for New Designs
IGBTs 650V 4A IGBT Stop Trench

Manufacturer:

Mfr Part:
RGT8NS65DGTL

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryIGBTs
TechnologySi
Package / CaseTO-262-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.1 V
Maximum Gate Emitter Voltage30 V
Continuous Collector Current at 25 C8 A
Pd - Power Dissipation65 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
SeriesRGT8NS65D
PackagingReel
Gate-Emitter Leakage Current200 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
Part # AliasesRGT8NS65D(LPDS)

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

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Reel

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