Reference Only

RGT8BM65DGTL1

Not Recommended for New Designs
IGBTs 5us Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT

Manufacturer:

Mfr Part:
RGT8BM65DGTL1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryIGBTs
TechnologySi
Package / CaseTO-252GE-3
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.1 V
Maximum Gate Emitter Voltage30 V
Continuous Collector Current at 25 C12 A
Pd - Power Dissipation62 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingReel
Gate-Emitter Leakage Current200 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Reel

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