Reference Only

RD3P02BATTL1

MOSFETs .

Manufacturer:

Mfr Part:
RD3P02BATTL1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance116 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge39 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation56 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time91 ns
Forward Transconductance - Min8.5 S
Product TypeMOSFETs
Rise Time16 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time115 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

Application Notes

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 18 Weeks
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Reel

(Minimum: 2,500 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.656$1,640.00
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