Reference Only

RD3P01BATTL1

MOSFETs .

Manufacturer:

Mfr Part:
RD3P01BATTL1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance240 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge19.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation25 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time45 ns
Forward Transconductance - Min4.4 S
Product TypeMOSFETs
Rise Time14 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time59 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

Application Notes

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Reel

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