Reference Only

RCD100N19TL

End of Life
MOSFETs 4V Drive Nch Power MOSFET

Manufacturer:

Mfr Part:
RCD100N19TL

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage190 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance182 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge52 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation85 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time75 ns
Forward Transconductance - Min6 S
Product TypeMOSFETs
Rise Time20 ns
SeriesRCD100N19
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time140 ns
Typical Turn-On Delay Time15 ns
Part # AliasesRCD100N19

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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