Reference Only

R8002ANX

Not Recommended for New Designs
MOSFETs 10V Drive Nch MOSFET

Manufacturer:

Mfr Part:
R8002ANX

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220FM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current2 A
Rds On - Drain-Source Resistance4.3 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge12.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation36 W
Channel ModeEnhancement
PackagingBulk
ConfigurationSingle
Fall Time70 ns
Forward Transconductance - Min0.5 S
Product TypeMOSFETs
Rise Time20 ns
SeriesR8002ANX
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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