Reference Only

R6502END3TL1

MOSFETs 650V 1.7A TO-252, Low-noise Power MOSFET.

Manufacturer:

Mfr Part:
R6502END3TL1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current1.7 A
Rds On - Drain-Source Resistance4 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge6.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation26 W
Channel ModeEnhancement
PackagingReel
Compliance3
ConfigurationSingle
Fall Time60 ns
Product TypeMOSFETs
Rise Time16 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 18 Weeks
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Reel

(Minimum: 2,500 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.473$1,182.50
$0.468$2,340.00
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