Reference Only

R6020FNX

Not Recommended for New Designs
MOSFETs Trans MOSFET N-CH 600V 20A

Manufacturer:

Mfr Part:
R6020FNX

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220FM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance250 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge65 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation85 W
Channel ModeEnhancement
PackagingBulk
ConfigurationSingle
Fall Time40 ns
Forward Transconductance - Min7 S
Product TypeMOSFETs
Rise Time70 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time170 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

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