Reference Only

R6000ENHTB1

Not Recommended for New Designs
MOSFETs

Manufacturer:

Mfr Part:
R6000ENHTB1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOP-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current500 mA
Rds On - Drain-Source Resistance8.8 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge4.3 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time251 ns
Product TypeMOSFETs
Rise Time27 ns
SubcategoryTransistors
Typical Turn-Off Delay Time37 ns
Typical Turn-On Delay Time17 ns
Part # AliasesR6000ENH

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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