Reference Only

QH8M22TCR

Not Recommended for New Designs
MOSFETs

Manufacturer:

Mfr Part:
QH8M22TCR

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSMT-8
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current2.5 A, 4.5 A
Rds On - Drain-Source Resistance46 mOhms, 190 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V, 3 V
Qg - Gate Charge2.6 nC, 9.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time2 ns, 10 ns
Forward Transconductance - Min2.6 S, 1.2 S
Product TypeMOSFETs
Rise Time2.9 ns, 10 ns
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time14.8 ns, 35 ns
Typical Turn-On Delay Time3.9 ns, 8 ns
Part # AliasesQH8M22

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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