Reference Only

GNP2025TD-ZTR

New Product
GaN FETs EcoGaN, 650V 59.8A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT.

Manufacturer:

Mfr Part:
GNP2025TD-ZTR

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseTOLL-8N
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current59.8 A
Rds On - Drain-Source Resistance35 mOhms
Vgs - Gate-Source Voltage- 10 V, + 6.5 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge13.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation291 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time26.2 ns
Moisture SensitiveYes
PackagingReel
Product TypeGaN FETs
ProductGaN HEMT
Rise Time8.2 ns
SubcategoryTransistors
TechnologyGaN
Transistor Type1 N-Channel
TypeE Mode GaN
Typical Turn-Off Delay Time40.1 ns
Typical Turn-On Delay Time13.5 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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