Reference Only
GNE1040TB
GaN FETs
Datasheet
GNE1040TB DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | GaN FETs | |
| Mounting Style | SMD/SMT | |
| Package / Case | DFN-8 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 150 V | |
| Id - Continuous Drain Current | 10 A | |
| Rds On - Drain-Source Resistance | 40 mOhms | |
| Vgs - Gate-Source Voltage | - 2 V to 8 V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | |
| Qg - Gate Charge | 2 nC | |
| Maximum Operating Temperature | + 150 C | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Product Type | GaN FETs | |
| Product | Power Transistors | |
| Subcategory | Transistors | |
| Technology | GaN | |
| Transistor Type | 1 N-Channel |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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