Reference Only

GNE1008TB

GaN FETs

Manufacturer:

Mfr Part:
GNE1008TB

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseDFN-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance8.5 mOhms
Vgs - Gate-Source Voltage- 2 V to 8 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge7 nC
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
ConfigurationSingle
Maximum Operating Frequency10 MHz
Product TypeGaN FETs
ProductPower Transistors
SubcategoryTransistors
TechnologyGaN
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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