Reference Only

EMZ8T2R

Bipolar Transistors - BJT DUAL PNP/NPN.

Manufacturer:

Mfr Part:
EMZ8T2R

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-563-6
Transistor PolarityNPN, PNP
ConfigurationDual
Collector- Emitter Voltage VCEO Max12 V, 50 V
Collector- Base Voltage VCBO15 V, 60 V
Emitter- Base Voltage VEBO6 V, 7 V
Collector-Emitter Saturation Voltage250 mV, 400 mV
Pd - Power Dissipation150 mW
Gain Bandwidth Product fT180 MHz, 260 MHz
Maximum Operating Temperature+ 150 C
SeriesEMZ8
PackagingReel
Continuous Collector Current- 500 mA, 150 mA
DC Collector/Base Gain hfe Min120 at 1 mA, 6 V
DC Current Gain hFE Max560 at 1 mA, 6 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesEMZ8

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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