Reference Only

BSM180D12P3C007

MOSFET Modules Half Bridge Module SiC UMOSFET & SBD.

Manufacturer:

Mfr Part:
BSM180D12P3C007

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFET Modules
TechnologySiC
Mounting StyleScrew Mount
Package / CaseModule
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current180 A
Vgs - Gate-Source Voltage- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage2.7 V
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation880 W
SeriesBSMx
PackagingTray
ConfigurationDual
Fall Time50 ns
Height21.1 mm
Length122 mm
Product TypeMOSFET Modules
Rise Time70 ns
SubcategoryDiscrete and Power Modules
TypeSiC Power Module
Typical Turn-Off Delay Time165 ns
Typical Turn-On Delay Time50 ns
Vr - Reverse Voltage1.2 kV
Width45.6 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541590080
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 27 Weeks
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(Minimum: 12 / Multiples: 1)
Quantity Unit PriceExt. Price
$563.22$6,758.64
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