Reference Only
BSM180D12P2E002
MOSFET Modules .
Datasheet
BSM180D12P2E002 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | MOSFET Modules | |
| Technology | SiC | |
| Mounting Style | Screw Mount | |
| Package / Case | Module | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 2 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Id - Continuous Drain Current | 204 A | |
| Vgs - Gate-Source Voltage | - 6 V, + 22 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 1.36 kW | |
| Packaging | Bulk | |
| Configuration | Dual | |
| Fall Time | 45 ns | |
| Height | 15.4 mm | |
| Length | 152 mm | |
| Product Type | MOSFET Modules | |
| Rise Time | 45 ns | |
| Subcategory | Discrete and Power Modules | |
| Type | SiC Power Module | |
| Typical Turn-Off Delay Time | 125 ns | |
| Typical Turn-On Delay Time | 45 ns | |
| Vr - Reverse Voltage | 1.2 kV | |
| Width | 62 mm |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541590080 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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Lead Time: 27 Weeks
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Bulk
(Minimum: 4 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $773.15 | $3,092.60 |
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