Reference Only

BSM180C12P2E202

MOSFET Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02.

Manufacturer:

Mfr Part:
BSM180C12P2E202

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFET Modules
TechnologySiC
Mounting StyleScrew Mount
Package / CaseModule
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current204 A
Vgs - Gate-Source Voltage- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage1.6 V
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.36 kW
SeriesBSMx
PackagingTray
ConfigurationSingle
Fall Time32 ns
Height15.4 mm
If - Forward Current180 A
Length152 mm
Product TypeMOSFET Modules
Rise Time36 ns
SubcategoryDiscrete and Power Modules
TypeSiC Power Module
Typical Turn-Off Delay Time139 ns
Typical Turn-On Delay Time49 ns
Vf - Forward Voltage1.6 V
Vr - Reverse Voltage1.2 kV
Width62 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Tray

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