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BM3G005MUV-LBE2

New Product
GaN FETs .

Manufacturer:

Mfr Part:
BM3G005MUV-LBE2

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseVQFN-46
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current68.8 A
Rds On - Drain-Source Resistance70 mOhms
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 105 C
Channel ModeEnhancement
TradenameNano Cap; EcoGaN
Fall Time2.7 ns
Maximum Operating Frequency2 MHz
PackagingReel
Product TypeGaN FETs
ProductGaN HEMT Power Stage
Rise Time5 ns
SubcategoryTransistors
TechnologySi
Typical Turn-Off Delay Time19 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8542390070
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 21 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Reel

(Minimum: 1,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$9.35$9,350.00
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