Reference Only
BM3G005MUV-LBE2
GaN FETs
Datasheet
BM3G005MUV-LBE2 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | GaN FETs | |
| Mounting Style | SMD/SMT | |
| Package / Case | VQFN-46 | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 68.8 A | |
| Rds On - Drain-Source Resistance | 70 mOhms | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 105 C | |
| Channel Mode | Enhancement | |
| Tradename | Nano Cap; EcoGaN | |
| Fall Time | 2.7 ns | |
| Maximum Operating Frequency | 2 MHz | |
| Packaging | Reel | |
| Product Type | GaN FETs | |
| Product | GaN HEMT Power Stage | |
| Rise Time | 5 ns | |
| Subcategory | Transistors | |
| Technology | Si | |
| Typical Turn-Off Delay Time | 19 ns | |
| Typical Turn-On Delay Time | 14 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8542390070 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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