Reference Only
2SD2687STP
Obsolete
Bipolar Transistors - BJT
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Transistor Polarity | NPN | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 12 V | |
| Collector- Base Voltage VCBO | 15 V | |
| Emitter- Base Voltage VEBO | 6 V | |
| Collector-Emitter Saturation Voltage | 250 mV | |
| Pd - Power Dissipation | 400 mW | |
| Gain Bandwidth Product fT | 360 MHz | |
| Maximum Operating Temperature | + 150 C | |
| Packaging | Reel | |
| Continuous Collector Current | 5 A | |
| DC Collector/Base Gain hfe Min | 350 at 500 mA, 2 V | |
| DC Current Gain hFE Max | 680 at 500 mA, 2 V | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors | |
| Part # Aliases | 2SD2687S |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290095 |
| TARIC | 8541290000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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