Reference Only

2SD2662T100

Not Recommended for New Designs
Bipolar Transistors - BJT TRANSISTOR BIPOLAR NPN; 30V 1.5A

Manufacturer:

Mfr Part:
2SD2662T100

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max30 V
Collector- Base Voltage VCBO30 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage350 mV
Maximum DC Collector Current1.5 A
Pd - Power Dissipation2 W
Gain Bandwidth Product fT330 MHz
Maximum Operating Temperature+ 150 C
PackagingReel
DC Collector/Base Gain hfe Min270 at 100 mA, 2 V
DC Current Gain hFE Max680 at 100 mA, 2 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # Aliases2SD2662

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Reel

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