2SB1188T100Q ROHM Semiconductor

2SB1188T100Q

Not Recommended for New Designs
Bipolar Transistors - BJT PNP 32V 2A SO-89

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2SB1188T100Q

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Not Assigned

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Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max32 V
Collector- Base Voltage VCBO40 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
Maximum DC Collector Current2 A
Pd - Power Dissipation2 W
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
PackagingReel
Continuous Collector Current- 2 A
DC Collector/Base Gain hfe Min82
DC Current Gain hFE Max390
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Reel

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