
SMBT 3906 B5000
Bipolar Transistors - BJT
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Bourns | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Transistor Polarity | PNP | |
| Configuration | Dual | |
| Maximum DC Collector Current | 200 mA | |
| Collector- Emitter Voltage VCEO Max | 40 V | |
| Collector- Base Voltage VCBO | 40 V | |
| Emitter- Base Voltage VEBO | 6 V | |
| Maximum DC Collector Current | 200 mA | |
| Pd - Power Dissipation | 330 mW | |
| Gain Bandwidth Product fT | 250 MHz | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 60 at 100 uA, 1 V | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| HTS | 8541290095 |
| TARIC | 8541210000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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