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BIDW75N65ES5

New Product
IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L

Manufacturer:

Mfr Part:
BIDW75N65ES5

TTI Part:
BIDW75N65ES5

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerBourns
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.42 V
Maximum Gate Emitter Voltage20 V
Continuous Collector Current at 25 C150 A
Pd - Power Dissipation394 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
SeriesBID
PackagingTube
Continuous Collector Current Ic Max150 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 18 Weeks
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(Minimum: 3,000 / Multiples: 600)
Quantity Unit PriceExt. Price
$3.25$9,750.00
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