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BIDW50N65T

IGBTs IGBT Discrete 650V, 50A in TO-247

Manufacturer:

Mfr Part:
BIDW50N65T

TTI Part:
BIDW50N65T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerBourns
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.65 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C100 A
Pd - Power Dissipation416 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesBID
PackagingTube
Continuous Collector Current Ic Max100 A
Gate-Emitter Leakage Current400 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 18 Weeks
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