These IXYS Littelfuse BiMOSFETs combine the strengths of a MOSFET and an IGBT. They have a positive temperature coefficient of Vce(sat) and Vf and feature low conduction losses making them ideal solutions for high frequency, high power density applications. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode.
IXYS IXYS BiMOSFETs
Features
- High Voltage Series
- High blocking voltage
- High power density
- High current handling capability
- Low conduction losses
- MOS gate turn on for drive simplicity
- International standard and proprietary ISOPLUSTM packages
- Very High Voltage
- "Free" intrinsic body diode
- High power density
- High frequency operation
- Low conduction losses
- MOS gate turn on for drive simplicity
- 4000V electrical isolation
Applications
- High Voltage Series
- Radar transmitter power supplies
- Radar pulse modulators
- Capacitor discharge circuits
- High voltage power supplies
- AC switches
- HV circuit breakers
- Pulser circuits
- High voltage test equipment
- Laser & X-ray generators
- Very High Voltage Series
- Switched-mode and resonant-mode power supplies
- Uninterruptible Power Supplies (UPS)
- Laser and X-ray generators
- Capacitor discharge circuits
- High voltage pulser circuits
- High voltage test equipment
- AC switches