SSM6J216FE - MOSFETs
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SSM6J216FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 12 V | 4.8 A | 26 mOhms | - 8 V, 8 V | 1 V | 12.7 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | |||
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