SSM6N57NU - MOSFETs
4 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Not Available Online | Si | ||||||||||||||||||||
Mfr: SSM6N57NU,LF TTI: SSM6N57NU,LF Toshiba Availability: 3,000In StockMOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS | 3,000In Stock | Si | N-Channel | 2 Channel | U-MOSVII-H | Reel | |||||||||||||||
3,000In Stock | Si | N-Channel | 2 Channel | Reel | |||||||||||||||||
Not Available Online | Si | N-Channel | 2 Channel |
