SSM3K329R - MOSFETs
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SSM3K329R,LF TTI: SSM3K329R,LF Toshiba Availability: 330,000In StockMOSFETs SM Sig N-CH MOS 30V 3.5A 12V VGSS | 330,000In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | |||||||||||||||
330,000In Stock | Si | N-Channel | 1 Channel | Reel | |||||||||||||||||
Not Available Online | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 3.5 A | 126 mOhms | - 12 V, 12 V | 400 mV | 1.5 nC | + 150 C | 1 W | Enhancement |