SiC MOSFETs
310 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SCT4062KRC15 TTI: SCT4062KRC15 ROHM Semiconductor Availability: 210In StockSiC MOSFETs TO247 1.2KV 26A N-CH SIC | 210In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KR | |||||
Mfr: SCT3080ALGC11 TTI: SCT3080ALGC11 ROHM Semiconductor Availability: 870In StockSiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC | 870In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 650 V | 30 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 134 W | Enhancement | SCT3080AL | |||||
Mfr: SCT4018KRC15 TTI: SCT4018KRC15 ROHM Semiconductor Availability: 210In StockSiC MOSFETs TO247 1.2KV 81A N-CH SIC | 210In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KR | |||||
Mfr: SCT3060ALGC11 TTI: SCT3060ALGC11 ROHM Semiconductor Availability: 720In StockSiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS | 720In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | SCT3060AL | |||||
Mfr: SCT2H12NZGC11 TTI: SCT2H12NZGC11 ROHM Semiconductor Availability: 490In StockSiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC | 490In Stock | ROHM Semiconductor | Through Hole | TO-3PFM-3 | N-Channel | 1 Channel | 1.7 kV | 3.7 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 35 W | Enhancement | SCT2H12NZ | ||||
Mfr: SCT4026DRC15 TTI: SCT4026DRC15 ROHM Semiconductor Availability: 450In StockSiC MOSFETs TO247 750V 56A N-CH SIC | 450In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 750 V | 56 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 176 W | Enhancement | SCT4026DR | |||||
Mfr: SCT4026DEC11 TTI: SCT4026DEC11 ROHM Semiconductor Availability: 450In StockSiC MOSFETs TO247 750V 56A N-CH SIC | 450In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 750 V | 56 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 176 W | Enhancement | SCT4026DE | |||||
Mfr: SCT4036KRHRC15 TTI: SCT4036KRHRC15 ROHM Semiconductor Availability: 100In StockSiC MOSFETs TO247 1.2KV 43A N-CH SIC | 100In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 43 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 176 W | Enhancement | SCT4036KRHR | |||||
Mfr: NSF080120L3A0Q TTI: NSF080120L3A0Q Nexperia Availability: 80In StockSiC MOSFETs TO247 1.2KV 36A N-CH SIC | 80In Stock | Nexperia | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 36 A | 120 mOhms | - 10 V, + 22 V | 2.9 V | 44 nC | - 55 C | + 175 C | 202 W | Enhancement | 934665928127 | ||||
Mfr: SCT4013DRC15 TTI: SCT4013DRC15 ROHM Semiconductor Availability: 300In StockSiC MOSFETs TO247 750V 105A N-CH SIC | 300In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4013DR | |||||
Mfr: SCT3080KRC14 TTI: SCT3080KRC14 ROHM Semiconductor Availability: 240In StockSiC MOSFETs TO247 1.2KV 31A N-CH SIC | 240In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3080KR | ||||
Mfr: SCT4045DEC11 TTI: SCT4045DEC11 ROHM Semiconductor Availability: 450In StockSiC MOSFETs TO247 750V 34A N-CH SIC | 450In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DE | |||||
Mfr: IXSA40N120L2-7TR TTI: IXSA40N120L2-7TR IXYS Availability: 100In StockSiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L | 100In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
Mfr: TW015N120C,S1F TTI: TW015N120C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 100 A | 182 mOhms | - 10 V, + 25 V | 5 V | 158 nC | - 55 C | + 175 C | 431 W | Enhancement | |||||
Mfr: TW048N65C,S1F TTI: TW048N65C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 40 A | 65 mOhms | - 10 V, + 25 V | 5 V | 41 nC | - 55 C | + 175 C | 132 W | Enhancement | |||||
Mfr: LSIC1MO120E0160 TTI: LSIC1MO120E0160 IXYS Availability: 450In StockSiC MOSFETs 1200 V 160 mOhm SiC Mosfet | 450In Stock | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 200 mOhms | - 5 V, + 20 V | 1.8 V | 57 nC | - 55 C | + 150 C | 125 W | Enhancement | |||||
Mfr: TW015N65C,S1F TTI: TW015N65C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 100 A | 21 mOhms | - 10 V, + 25 V | 5 V | 128 nC | - 55 C | + 175 C | 342 W | Enhancement | |||||
Mfr: SCT4036KEC11 TTI: SCT4036KEC11 ROHM Semiconductor Availability: 450In StockSiC MOSFETs TO247 1.2KV 43A N-CH SIC | 450In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 43 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 176 W | Enhancement | SCT4036KE | |||||
Mfr: SCT4036KRC15 TTI: SCT4036KRC15 ROHM Semiconductor Availability: 450In StockSiC MOSFETs TO247 1.2KV 43A N-CH SIC | 450In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 43 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 176 W | Enhancement | SCT4036KR | |||||
Mfr: SCT4045DRC15 TTI: SCT4045DRC15 ROHM Semiconductor Availability: 450In StockSiC MOSFETs TO247 750V 34A N-CH SIC | 450In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DR | |||||
Mfr: SCT4062KEC11 TTI: SCT4062KEC11 ROHM Semiconductor Availability: 450In StockSiC MOSFETs TO247 1.2KV 26A N-CH SIC | 450In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KE | |||||
Mfr: NSF040120L3A0Q TTI: NSF040120L3A0Q Nexperia Availability: 60In StockSiC MOSFETs TO247 1.2KV 66A N-CH SIC | 60In Stock | Nexperia | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 66 A | 60 mOhms | - 10 V, + 22 V | 2.9 V | 84 nC | - 55 C | + 175 C | 319 W | Enhancement | 934665927127 | ||||
Mfr: IXSH40N120L2KHV TTI: IXSH40N120L2KHV IXYS Availability: 100In StockSiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L | 100In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
Mfr: IXSA80N120L2-7TR TTI: IXSA80N120L2-7TR IXYS Availability: 100In StockSiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L | 100In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 4.5 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | |||||
Mfr: TW060N120C,S1F TTI: TW060N120C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 36 A | 182 mOhms | - 10 V, + 25 V | 5 V | 46 nC | - 55 C | + 175 C | 170 W | Enhancement |
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