SiC MOSFETs
318 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TW015Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 158 nC | + 175 C | 431 W | Enhancement | ||||||
Mfr: TW015Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 128 nC | + 175 C | 342 W | Enhancement | ||||||
Mfr: TW030Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 60 A | 30 mOhms | - 10 V, + 25 V | 5 V | 82 nC | + 175 C | 249 W | Enhancement | ||||||
Mfr: TW048Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 40 A | 48 mOhms | - 10 V, + 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | ||||||
Mfr: TW107N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 113 mOhms | - 10 V, + 25 V | 5 V | 28 nC | - 55 C | + 175 C | 111 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 10 V, + 22 V | 5.6 V | 42 nC | + 175 C | 59 W | Enhancement | SCT3160KW7HR | ||||||
0In Stock | IXYS | SMD/SMT | HiPerFET | ||||||||||||||||||
Mfr: SCT3120ALHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3120ALHR | ||||
Mfr: SCT3160KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3160KLHR | ||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | |||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
Mfr: IXSJ80N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 85 A | 22.5 mOhms | - 4 V, + 21 V | 4.8 V | 154 nC | - 40 C | + 150 C | 266 W | Enhancement | |||||
Mfr: MXPQ120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | ||||||
Mfr: IXSG110N65L2K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL | 0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | |||||
0In Stock | Nexperia | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 38 A | 90 mOhms | - 10 V, + 22 V | 2.9 V | 57 nC | - 55 C | + 175 C | 183 W | Enhancement | 934668747118 934670000000 | |||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
Mfr: TW083Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 30 A | 83 mOhms | - 10 V, + 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement |
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