SiC MOSFETs
363 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXSJ25N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 62mOhm 28A at 25C in TO247-4L | 0In Stock | Through Hole | ISO247-4L | 1 Channel | 1.2 kV | 28 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 49 nC | - 40 C | + 150 C | Enhancement | ||||||
Mfr: IXSJ80N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | Through Hole | ISO247-4 | 1 Channel | 1.2 kV | 85 A | 23.4 mOhms | 21 V | 4.8 V | 155 nC | - 40 C | + 150 C | 223.2 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 12 A | 313 mOhms | - 10 V, + 22 V | 3 V | 15 nC | - 55 C | + 175 C | 85 W | Enhancement | ||||||
Image Not Available Mfr: TW054V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | SMD/SMT | DFN-5 | 1 Channel | 650 V | 36 A | 81 mOhms | - 10 V, 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | ||||||
Image Not Available Mfr: TW031V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | SMD/SMT | DFN-5 | 1 Channel | 650 V | 53 A | 45 mOhms | - 10 V, 25 V | 5 V | 65 nC | + 175 C | 156 W | Enhancement | ||||||
Mfr: NSF040120T1A1HP TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF040120T1A1/SOT8114/QDPAK | 0In Stock | SMD/SMT | QDPAK-22 | 1 Channel | 1.2 kV | 50 A | 26 mOhms | - 10 V, + 22 V | 2.9 V | 78 nC | - 55 C | + 175 C | 217 W | Enhancement | 934669816128 | ||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, + 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | SMD/SMT | TTOLL-8 | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
Image Not Available Mfr: TW123V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | SMD/SMT | DFN-5 | 1 Channel | 650 V | 18 A | 183 mOhms | - 10 V, 25 V | 5 V | 21 nC | + 175 C | 76 W | Enhancement | ||||||
Mfr: NSF060120L4A0-QQ TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF060120L4A0-Q/SOT8071/TO247- | 0In Stock | 934669851127 | |||||||||||||||||
Mfr: NSF060120T2A0-QJ TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF060120T2A0-Q/SOT8107/X.PAK | 0In Stock | 934668908118 | |||||||||||||||||
Mfr: MXP120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 31 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 45 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
Mfr: IXSJ43N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | Through Hole | ISO247-4 | 1 Channel | 1.2 kV | 46 A | 47 mOhms | 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 143.7 W | Enhancement | |||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
Mfr: NSF080120T2A1-QJ TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF080120T2A1-Q/SOT8107/X.PAK | 0In Stock | 934669854118 | |||||||||||||||||
Mfr: NSF017120T1A0HP TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF017120T1A0/SOT8114/QDPAK | 0In Stock | SMD/SMT | QDPAK-22 | 1 Channel | 1.2 kV | 111 A | 26 mOhms | - 10 V, + 22 V | 2.9 V | 196 nC | - 55 C | + 175 C | 469 W | Enhancement | 934669814128 | ||||
Mfr: NSF030120T1A0HP TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF030120T1A0/SOT8114/QDPAK | 0In Stock | SMD/SMT | QDPAK-22 | 1 Channel | 1.2 kV | 68 A | 45 mOhms | - 10 V, + 22 V | 2.9 V | 108 nC | - 55 C | + 175 C | 313 W | Enhancement | 934669815128 | ||||
Mfr: MXPQ120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 48.3 A | 71 mOhms | - 5 V, + 20 V | 4 V | 55.6 nC | - 55 C | + 175 C | 250 W | Enhancement |