SiC MOSFETs
363 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SCT3160KWATL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET | 0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | |||||||
Mfr: IXSH65N120L2KHV TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 65 A | 52 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | |||||
Mfr: MXP120A045SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 136 W | Enhancement | |||||||
Mfr: TW027Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 58 A | 27 mOhms | - 10 V, + 25 V | 5 V | 65 nC | + 175 C | 156 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
Mfr: IXSH80N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 750 V | 38 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 115 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 750 V | 22 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 750 V | 38 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 115 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
Mfr: MXP120A080SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | |||||||
Mfr: NSF040120L4A0Q TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF040120L4A0/SOT8071/TO247-4L | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 65 A | 60 mOhms | - 10 V, + 22 V | 2.9 V | 95 nC | - 55 C | + 175 C | 306 W | Enhancement | 934665929127 | ||||
Mfr: IXSJ43N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | Through Hole | TO-247-3L | 1 Channel | 1.2 kV | 45 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 142 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247AD-3L | 1 Channel | 1.2 kV | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | ||||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
0In Stock | SMD/SMT | HiPerFET | |||||||||||||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 10 A | 585 mOhms | - 6 V, + 22 V | 4 V | 27 nC | + 175 C | 85 W | Enhancement | SCT2450KEHR | ||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 10 V, + 22 V | 5.6 V | 42 nC | + 175 C | 59 W | Enhancement | SCT3160KW7HR |
