SiC MOSFETs
318 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SCT3080KLGC11 TTI: SCT3080KLGC11 ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 31 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3080KL | ||||
Mfr: TW060N120C,S1F TTI: TW060N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 36 A | 182 mOhms | - 10 V, + 25 V | 5 V | 46 nC | - 55 C | + 175 C | 170 W | Enhancement | |||||
Mfr: TW083N65C,S1F TTI: TW083N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 145 mOhms | - 10 V, + 25 V | 5 V | 21 nC | - 55 C | + 175 C | 76 W | Enhancement | |||||
Mfr: TW045N120C,S1F TTI: TW045N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 40 A | 182 mOhms | - 10 V, + 25 V | 5 V | 57 nC | - 55 C | + 175 C | 182 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | D2PAK-7 (TO-263-7) | N-Channel | 1 Channel | 1.7 kV | 6.4 A | 750 mOhms | - 20 V, + 20 V | 1.8 V | 11 nC | - 55 C | + 175 C | 65 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | SCT3160KW7 | ||||||
Mfr: SCT3080KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 2.7 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | AEC-Q101 | SCT3080KLHR | |||
Mfr: IXSJ25N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 28 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 52 nC | - 40 C | + 150 C | 75.3 W | Enhancement | |||||
0In Stock | Nexperia | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 53 A | 60 mOhms | - 10 V, + 22 V | 2.9 V | 81 nC | - 55 C | + 175 C | 234 W | Enhancement | 934668741127 934670000000 | |||||
Image Not Available Mfr: TW054V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 36 A | 81 mOhms | - 10 V, 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | ||||||
Image Not Available Mfr: TW092V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 27 A | 136 mOhms | - 10 V, 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | ||||||
Image Not Available Mfr: TW031V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 53 A | 45 mOhms | - 10 V, 25 V | 5 V | 65 nC | + 175 C | 156 W | Enhancement | ||||||
Mfr: IXSJ80N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 85 A | 23.4 mOhms | 21 V | 4.8 V | 155 nC | - 40 C | + 150 C | 223.2 W | Enhancement | |||||
Mfr: IXSA110N65L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | Enhancement | AEC-Q101 | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | - 40 C | + 175 C | 136 W | Enhancement | AEC-Q101 | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 750 V | 22 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | AEC-Q101 | ||||||
Mfr: MXP120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-3 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 84 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 12 A | 313 mOhms | - 10 V, + 22 V | 3 V | 15 nC | - 55 C | + 175 C | 85 W | Enhancement | ||||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 32 A | 100 mOhms | - 10 V, + 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 14 A | 364 mOhms | - 6 V, + 22 V | 4 V | 36 nC | + 175 C | 108 W | Enhancement | SCT2280KEHR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 10 A | 585 mOhms | - 6 V, + 22 V | 4 V | 27 nC | + 175 C | 85 W | Enhancement | SCT2450KE |
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